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Unlocking new efficiency and power density possibilities with CoolSiC MOSFETs 400 V G2 Dr Martin Wattenberg is responsible as a System Application Engineer for the development of innovative systems using WBG switches Sriram Jagannath M Sc works as a Staff Engineer in Product Definition and Application Engineering and is responsible for the CoolSiC MOSFET 400 V G2 portfolio Dr Ralf Siemieniec is a Senior Principal Engineer and works on the development of technology concepts for silicon and silicon carbide MOSFETs Infineon’s CoolSiC MOSFETs 400 V G2 are designed to bridge the gap between 200 V Si trench MOSFETs and 650 V SiC trench MOSFETs to address twolevel topologies for busvoltages up to 300 V DC and enabling the adoption of innovative threelevel topologies for bus voltages up to 600 V DC These cuttingedge devices offer ultralow switching losses and low onstate resistance R DS on making them ideal for a wide range of applications like AI server and datacenter power supplies solar and energy storage systems uninterruptible power supply motor control Class-Daudio amplifiers among many others Optimized for 2-level topologies with 120 V AC input voltage or up to 300 V DC input voltage and 3-level topologies with 230 to 350 V AC or 400 to 600 V DC input voltages CoolSiC MOSFETs 400 V G2 deliver significant gains in switching figuresofmerit FoMs and R DS on stability over junction temperature This makes them a perfect fit for hardswitching applications such as bridgeless bidirectional CCM totem pole PFCs Figure 1 and softswitching applications like synchronous rectifiers to achieve the highest possible system efficiency and power density while optimizing the performancetocost ratio This article delves into the technology behind CoolSiC MOSFETs 400 V G2 and verify the expected efficiencies and power density gains through measurements in a 3-level flying capacitor CCM continuous conduction mode totempole PFC power factor correction technology demonstrator By comparing the results with those of a common 2-level totempole PFC using 650 V SiC MOSFETs we showcase the benefits of this innovative technology and its potential to transform the industry New 400 V SiC trench MOSFET structure for improved performance Building on the success of firstgeneration CoolSiC devices the new 400 V SiC MOSFET takes advantage of continuous technology POWER SEMICONDUCTORS Im age Andrew 505 stock adobe com 12 PCIM Magazine 02 2024