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semiconductor structures and emphasises the potential of AlYN for the largescale production of semiconductor components Development of nonvolatile memories Due to its ferroelectric properties AlYN is highly suitable for the development of nonvolatile memory applications Another important advantage is that the material does not have a layer thickness limit Therefore the research team at Fraunhofer IAF encourages further research into the properties of AlYN layers for nonvolatile memories as AlYNbased memories can drive sustainable and energyefficient data storage solutions This is particularly relevant for data centres which are used to cope with the exponential increase in computing capacity for artificial intelligence and have significantly higher energy consumption Oxidation as a challenge Amajor hurdle for the industrial use of AYN is its susceptibility to oxidation which impairs the material’s suitability for certain electronic applications “In the future it will be important to research strategies to minimise or overcome oxidation The development of highpurity precursors the application of protective coatings or innovative manufacturing techniques could contribute to this So far the susceptibility of AlYN to oxidation has been a major challenge for research to ensure that research efforts are focused on the areas with the greatest chance of success ” Dr Leone therefore demands eg was recently achieved It has been possible to produce AlYN GaN heterostructures with precisely adjustable yttrium concentration which are characterised by excellent structural quality and electrical properties The new heterostructures have a yttrium concentration of up to 16 per cent Under the leadership of Dr Lutz Kirste the structural analysis group carried out further detailed analyses to deepen the understanding of the structural and chemical properties of AlYN In addition the Fraunhofer researchers have already been able to measure very promis - ing electrical properties of AlYN that are interesting for use in electronic components “We were able to observe impressive values for sheet resistance electron density and electron mobility These results have shown us the potential of AlYN for highfrequency and highperformance electronics ” says Dr Leone AlYN GaN for highfrequency applications Thanks to its wurtzite crystal structure AlYN can be adapted very well to the wurtzite structure of gallium nitride with a suitable compo sition An AlYN GaN heterostructure promises the development of semiconductor devices with improved performance and reliability In addition AlYN has the ability to induce a twodimensional electron gas 2DEG in heterostructures at a yttrium concentration of about 8 per cent From the results of the material characterisation it can be deduced that AlYN can be used in transistors with high electron mobility HEMTs The researchers were able to observe a significant increase in electron mobility at low temperatures more than 3000 cm 2 Vs at 7 K Meanwhile the team has already made significant progress in demonstrating the epitaxial heterostructure required for fabrication and is continuing to explore the new semiconductor with a view to producing HEMTs The researchers in Freiburg can also already venture a positive prognosis for industrial use with AlYN GaN heterostructures grown on 4-inch SiC substrates they were able to demonstrate the scalability and structural uniformity of the heterostructures The successful production of AlYN layers in a commercial MOCVD reactor enables scaling up to larger substrates in larger MOCVD reactors This method is considered to be the most productive for the production of largearea Researchers at Fraunhofer IAF in Freiburg have succeeded in growing AlYN GaN heterostructures in a MOCVD reactor on 4-inch SiC substrates Im age Fraunhofer IA F SEMICONDUCTOR MATERIALS Im age Fraunhofer IA F With their work on epitaxy and characterisation of AlYN GaN heterostructures the Fraunhofer IAF research team has achieved a breakthrough in the field of semiconductor materials 11 PCIM Magazine 02 2024