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Semiconductor materialS alYn promises more energyefficient and powerful electronics engelbert Hopf senior editor at WeKa Fachmedien based on documents from the Freiburg Fraunhofer institute iaF this summer researchers at the Fraunhofer institute iaF succeeded in producing and characterising a promising new semiconductor material aluminium yttrium nitride alYn using the mocVd process aiYn has enormous potential for use in energyefficient highfrequency and highperformance electronics due to its outstanding material properties aluminium yttrium nitride had already attracted the interest of various research groups in the past However the growth of the material has so far presented a major challenge So far it has only been possible to deposit aiYn using the magnetron sputtering process researchers at the Fraunhofer institute for applied Solid State Physics iaF have now recently succeeded in producing the new material using mocVd technology metalorganic chemical vapour deposition thus enabling the development of new diverse applications “our research marks a milestone in the development of new semiconductor structures alYn is a material that enables an increase in performance while minimising energy consumption and can thus pave the way for innovations in electronics that our digitally networked society and the everincreasing demands on technologies urgently need ” says dr Stefano leone scientist at Fraunhofer iaF in the epitaxy department due to its promis - ing material properties alYn can become a key material for future technological innovations From the aluminium yttrium nitride layer to heterostructure recent research had already demonstrated the material properties of alYn such as ferroelectricity When developing the new compound semiconductor the researchers at Fraunhofer iaF focussed primarily on its adaptability to gallium nitride Gan the lattice structure of aiYn can be optimally adapted to Gan and the alYn Gan heterostructure promises significant advantages for the development of futureoriented electronics last year the research group at Fraunhofer iaF had already achieved groundbreaking results when they succeeded for the first time in depositing a 600 nm thick alYn layer this layer with a wurtzite structure contained an unprecedented yttrium concentration of over 30 per cent a further breakthrough im age d abarti stock adobe com the different colour nuances of the alYn Gan wafers visible here result from different yttrium concentrations and growth conditions im age Fraunhofer ia F 10 Pcim magazine 02 2024