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Manufacturing SuperQ Technology Addresses Manufacturing Risk in Power Electronics News from the world of SuperJunction MOSFETs iDEAL Semiconductor has launched the SuperQ-Design a new approach with an asymmetrical RESURF architecture that maximizes the conduction region Rather than relying on conventional Ppillars for charge balancing the new technology uses a proprietary highaspectratio deep trench structure with sidewall charge distribution This architectural shift enables up to 95 percent of the device area to contribute to current conduction compared to 50 percent or less in traditional Superjunction devices By Ryan Manack Vice President of Marketing at iDEAL Semiconductor The global power semiconductor industry faces an unprecedented convergence of supply chain vulnerabilities that threaten the stability of critical electronics manufacturing Infrastructure costs geopolitical events climate change natural resource shortages and factory shutdowns continue to contribute to ongoing challenges in semiconductor supply chains To compound this the demand for power electronics has surged due to a boom in primarily the AI automotive and renewable energy sectors The vulnerabilities in the chipmaking supply chain have particularly affected the growing demand for advanced materials like silicon carbide SiC and gallium nitride GaN While these widebandgap semiconductors offer electrical performance benefits and higher switching frequencies they face significant procurement challenges due to high costs primarily from complexities in their growth processes substrate availability and defect density issues For example SiC boule growth temperature growth rates and low wafer yield due to defectivity leads to a far more expensive raw wafer as starting material prior to epitaxial growth and Power MOSFET wafer processing see Table 1 This creates a strategic dilemma for power electronics designers either accept the performance limitations of traditional silicon or embrace more expensive widebandgap alternatives with limited and highly concentrated supply chains this year alone has seen Wolfspeed enter administration and TSMC stop its production of GaN Now however a third choice has emerged a breakthrough in silicon power semiconductor architecture that delivers enhanced performance SuperQ™ technology developed by iDEAL Semiconductor represents a fundamental shift in power MOSFET design that significantly extends silicon’s performance envelope such as notable reductions in onresistance RDSon and switching losses without losing any of the conventional advantages of silicon such as proven reliability lowcost production and highvolume manufacturing capacity Silicon architectural innovation The evolution of power semiconductor architectures reveals a persistent tradeoff designers have had to face between performance and manufacturability Traditional Im age kaliel stock adobe com 5 PCIM Magazine 02 2025